Electrical properties of Sn/Methyl Violet/p-Si/Al Schottky diodes

dc.authorid0000-0002-1556-6141
dc.contributor.authorOzkartal, A.
dc.contributor.authorAmeen, R. H. Hamad
dc.contributor.authorTemirci, C.
dc.contributor.authorTurut, A.
dc.date.accessioned2025-05-10T19:28:59Z
dc.date.issued2019
dc.departmentİstanbul Medeniyet Üniversitesi
dc.descriptionInternational Congress on Semiconductor Materials and Devices (ICSMD) -- AUG 17-19, 2017 -- Selcuk Univ, Konya, TURKEY
dc.description.abstractWe studied the electrical characteristics of a Schottky diode with organic components Sn/methyl-violet/p-Si/Al. We investigated the diode's current-voltage (I-V), capacitance-voltage (C-V), and capacitance-frequency (C-f). From ln(I)-V plots of the diodes, ideality factor (n) and saturation current (I-0) were calculated. Moreover, the barrier height (Phi(b)) and series resistance (R-S) were calculated with Cheungs' and Norde functions. Results shown that at the methyl-violet layerplayed an important role in electrical properties such as series resistance, barrier height, ideality factor and capacitance. (C) 2019 Elsevier Ltd. All rights reserved.
dc.identifier.endpage1818
dc.identifier.issn2214-7853
dc.identifier.scopusqualityN/A
dc.identifier.startpage1811
dc.identifier.urihttps://hdl.handle.net/20.500.14730/7557
dc.identifier.volume18
dc.identifier.wosWOS:000495858400004
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofMaterials Today-Proceedings
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250302
dc.subjectOrganic interlayer
dc.subjectSchottky diodes
dc.subjectMethyl-violet
dc.titleElectrical properties of Sn/Methyl Violet/p-Si/Al Schottky diodes
dc.typeConference Object

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