Conductance-capacitance and voltage behavior of 1% Os-doped YMnO3/p-Si contacts under varying frequencies

Abstract

The admittance characterizations of the ferroelectric Perovskite Materials 1% Osmium (Os)-doped YMnO3 and p-Si contacts were conducted by capacitance-voltage (C-V) and conductance-voltage (G-V) curves at various frequencies. In measurements performed in this study, it was seen that the device behaves like a metal/oxide layer/semiconductor (MOS) or a metal/insulator layer/semiconductor (MIS) capacitor, just because of the ferroelectric thin film at the metal/Si substrate interface. Therefore, an accumulation region (saturation region) formed in the forward bias C-V and G-V curves at each frequency. The accumulation region series resistance value R-sc was determined from the C-V and G-V curves. The R-sc value ranged from 652 omega at 20 kHz to 56 omega at 1000 kHz. Furthermore, the series resistance R-s versus V curves with frequency as a parameter were plotted from the C-V and G-V data. A peak appeared around 0.0 V in the R-s vs V curve at each frequency. The peak position of the R-s shifted towards positive voltages from approximately - 0.2 V at 20 kHz to about 0.10 V at 1000 kHz. The peak position in the corrected conductance vs voltage curves shifted towards positive voltages from approximately 0.0 V at 20 kHz to about 0.20 V at 1000 kHz. It was seen that the series resistance effect caused the highest error in the capacitance occurs in accumulation and in some part of the depletion region at C-V and G-V results depending on frequency. So to conclude, it is not possible to disregard the series resistance everytime. Therefore, the series resistance must be measured and must be considered at the measured admittance.