Schottky barrier diode parameters of Ag/MgPc/p-Si structure

Abstract

An Ag/Pc/p-Si Schottky barrier (SB) diode was fabricated. The current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were carried out to determine the characteristic parameters such as barrier height, ideality factor and series resistance of the SB diode. The non-linear behavior of ln (I) vs. ln (V) and ln (I/V) vs. V-1/2 plots indicated that the thermoionic emission theory can be applied to evaluate junction parameters for the investigated SB diode rather than space-charge limited conduction (SCLC) mechanism and bulk-limited Poole-Frenkel emission. The bulk doping concentration N-B and fixed oxide charges N-f was determined from the measured high frequency C-V curve and was found to be 9.5 x 10(14) cm(-3) and 2.3 x 10(13) cm(-2), respectively. The values of barrier height obtained from Norde's function were compared with those from the forward bias current-voltage characteristic, and it was seen that there was a good agreement between barrier heights from both methods.