Effect of temperature on the current (capacitance and conductance)-voltage characteristics of Ti/n-GaAs diode

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dc.authorid0000-0002-3091-3746
dc.contributor.authorEjderha, K.
dc.contributor.authorDuman, S.
dc.contributor.authorNuhoglu, C.
dc.contributor.authorUrhan, F.
dc.contributor.authorTurut, A.
dc.date.accessioned2025-05-10T19:44:41Z
dc.date.issued2014
dc.departmentİstanbul Medeniyet Üniversitesi
dc.description.abstractIn this study, Ti/n-GaAs Schottky barrier diode has been fabricated by DC magnetron sputtering. The current-voltage, capacitance-voltage, and conductance-voltage characteristics of Ti/n-GaAs diode have been investigated in the temperature range of 80-320 K. The ideality factor and barrier height values have been calculated from the forward current-voltage characteristics. The variation of the diode parameters with the sample temperature has been attributed to the presence of the lateral inhomogeneities of the barrier height. The temperature dependent capacitance-voltage characteristics have been measured to calculate the carrier concentration, diffusion potential, barrier height, and temperature coefficient of the barrier height (alpha = -0.65 meV K-1). The fact that the temperature coefficient of the barrier height changes from metal to metal has been ascribed to the chemical nature of the contact metal or metal electronegativity. (C) 2014 AIP Publishing LLC.
dc.identifier.doi10.1063/1.4904918
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issue23
dc.identifier.scopus2-s2.0-84919634329
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1063/1.4904918
dc.identifier.urihttps://hdl.handle.net/20.500.14730/10990
dc.identifier.volume116
dc.identifier.wosWOS:000346634500040
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAip Publishing
dc.relation.ispartofJournal of Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250302
dc.subjectCurrent-Voltage Characteristics
dc.subjectBarrier Height Distribution
dc.subjectSchottky Barriers
dc.subjectCapacitance-Voltage
dc.subjectElectron-Transport
dc.subjectSeries Resistance
dc.subjectSi
dc.subjectParameters
dc.subjectInhomogeneity
dc.subjectCoefficient
dc.titleEffect of temperature on the current (capacitance and conductance)-voltage characteristics of Ti/n-GaAs diode
dc.typeArticle

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