Examination of optical properties of YbFeO3 films via doping transition element osmium

dc.authorid0000-0002-9716-4444
dc.authorid0000-0002-0008-5265
dc.authorid0000-0002-7410-1272
dc.authorid0000-0002-3628-3343
dc.contributor.authorPolat, O.
dc.contributor.authorÇaglar, M.
dc.contributor.authorCoşkun, F. M.
dc.contributor.authorSobola, D.
dc.contributor.authorKonecny, M.
dc.contributor.authorCoşkun, M.
dc.contributor.authorCaglar, Y.
dc.date.accessioned2025-05-10T19:43:13Z
dc.date.issued2020
dc.departmentİstanbul Medeniyet Üniversitesi
dc.description.abstractThe band gap engineering studies have grabbed enormous attention from scientists due to offering modification for the band gap of interested materials. This study exhibits that Os with different atomic percentages (1 and 5 mol %) can replace the Fe sites. Furthermore, it has been realized that the band gap of YbFO can be lowered slightly via Os doping from 2.10 eV to 2 eV for 1 mol % Os doped compounds and it goes slightly up to 2.12 eV for 5 mol % Os substituted sample. The optical features such as optical dielectric constant, conductivity, index (n), extinction coefficient (k), reflectance % and transmittance % of Os doped YbFO thin films were scrutinized by diffuse reflectance spectroscopy (DRS). It is noticed that the reflectance % rises as the Os dopant ratio goes up. For instance, the reflectance % of YbFO is similar to 20 at the wavelength of 650 nm, whereas, it becomes similar to 47 at the same wavelength value. Furthermore, it has been shown that the refractive index n advances from 3 for YbFO up to 6 for 5 mol % Os doped sample at 1.9 eV photon energy. It has been exhibited that the extinction coefficient k of 5 mol % doped compound has the lowest values among the studied samples. For example, k is around 0.1 for the undoped compound, yet, it drops to about 0.025 for 5 mol % Os substituted specimen at 1.9 eV. It has been also demonstrated that the real part of the optical dielectric constant increases as Os dopant level goes up. For instance, it is around 8 for YbFO and it becomes close 35 when the photon energy is 1.9 eV. It should be mentioned that as the photon energy is further ramped up, the real part of the dielectric constant for the investigated samples decreases and it becomes around 3 at 3.8 eV. When the real part of the conductivity is taken account, it is seen that 5 mol % Os doped YbFO sample has the lowest conductivity value compared to other samples. It is 1x10(4) S/m for 5 mol % sample and it becomes similar to 1.6x10(4) S/m for the undoped sample. Moreover, Photoluminescence (PL) spectroscopy studies have revealed that 5 mol % substituted compound has the highest oxygen vacancies compared to other samples. Raman spectroscopy investigation has unveiled that the samples have similar space group.
dc.description.sponsorshipScientific and Technological Research Council of Turkey (TUBITAK) [116F025]; ESF [CZ.02.2.69/0.0/0.0/17_050/0008462]; MEYS CR [LM2018110]; Eskisehir Technical University Commission of Scientific Research Project [1706F385]
dc.description.sponsorshipThis work was supported by The Scientific and Technological Research Council of Turkey (TUBITAK) through Grant No: 116F025 and Eskisehir Technical University Commission of Scientific Research Project through Grant No. 1706F385. O. Polat is supported by the ESF under the project CZ.02.2.69/0.0/0.0/17_050/0008462. We acknowledge CzechNanoLab Research Infrastructure supported by MEYS CR (LM2018110).
dc.identifier.doi10.1016/j.optmat.2020.109911
dc.identifier.issn0925-3467
dc.identifier.issn1873-1252
dc.identifier.scopus2-s2.0-85083878214
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.optmat.2020.109911
dc.identifier.urihttps://hdl.handle.net/20.500.14730/10536
dc.identifier.volume105
dc.identifier.wosWOS:000539377300039
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofOptical Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250302
dc.subjectOrthoferrite thin film
dc.subjectMagnetron sputtering
dc.subjectOs doping
dc.subjectBand gap engineering
dc.subjectOptical properties
dc.subjectPhotoluminescence
dc.subjectRaman
dc.titleExamination of optical properties of YbFeO3 films via doping transition element osmium
dc.typeArticle

Dosyalar

Orijinal paket

Listeleniyor 1 - 1 / 1
Yükleniyor...
Küçük Resim
İsim:
10536.pdf
Boyut:
2.01 MB
Biçim:
Adobe Portable Document Format