Conductance enhancement due to interface magnons in electron-beam evaporated MgO magnetic tunnel junctions with CoFeB free layer deposited at different pressure

Basit Öğe Kaydı
dc.authorid0000-0003-0053-8452
dc.authorid0000-0002-7439-6920
dc.authorid0000-0002-5258-9035
dc.contributor.authorGuo, P.
dc.contributor.authorLi, D. L.
dc.contributor.authorFeng, J. F.
dc.contributor.authorKurt, H.
dc.contributor.authorYu, G. Q.
dc.contributor.authorChen, J. Y.
dc.contributor.authorWei, H. X.
dc.date.accessioned2025-05-10T19:44:41Z
dc.date.issued2014
dc.departmentİstanbul Medeniyet Üniversitesi
dc.description.abstractElectron-beam evaporated MgO-based magnetic tunnel junctions have been fabricated with the CoFeB free layer deposited at Ar pressure from 1 to 4 mTorr, and their tunneling process has been studied as a function of temperature and bias voltage. By changing the growth pressure, the junction dynamic conductance dI/dV, inelastic electron tunneling spectrum d(2)I/dV(2), and tunneling magnetoresistance vary with temperature. Moreover, the low-energy magnon cutoff energy E-C derived from the conductance versus temperature curve agrees with interface magnon energy obtained directly from the inelastic electron tunneling spectrum, which demonstrates that interface magnons are involved in the electron tunneling process, opening an additional conductance channel and thus enhancing the total conductance. (C) 2014 AIP Publishing LLC.
dc.description.sponsorshipState Key Project of Fundamental Research of Ministry of Science and Technology [MOST] [2010CB934400]; National Natural Science Foundation [NSFC] [11374351, 11174341, 11222432]; Science Foundation Ireland via NISE project [10/IN.1/13006]
dc.description.sponsorshipThe work was supported by the State Key Project of Fundamental Research of Ministry of Science and Technology [MOST, No. 2010CB934400], the National Natural Science Foundation [NSFC, Grant Nos. 11374351, 11174341, and 11222432], and Science Foundation Ireland via the NISE project 10/IN.1/13006.
dc.identifier.doi10.1063/1.4898683
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issue15
dc.identifier.scopus2-s2.0-84908032875
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1063/1.4898683
dc.identifier.urihttps://hdl.handle.net/20.500.14730/10988
dc.identifier.volume116
dc.identifier.wosWOS:000344345400036
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAmer Inst Physics
dc.relation.ispartofJournal of Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250302
dc.subjectRoom-Temperature
dc.subjectMagnetoresistance
dc.titleConductance enhancement due to interface magnons in electron-beam evaporated MgO magnetic tunnel junctions with CoFeB free layer deposited at different pressure
dc.typeArticle

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu