Low Voltage FinFET Based OTA

Abstract

Designing high performance analog integrated circuits in low power applications with reduced channel length devices is more significant for integrated circuit applications. Operational transconductance amplifier is one of the most important building block with the highest power consumption in analog circuits. One of the methods that can be used to design an OTA circuit that consumes less power, has higher performance, has more gain, and has less leakage current is to use FinFET transistor. FinFET is a promising alternative to conventional MOSFET because of its scalability, superior controls over channel, lowering the short channel effects, high drain current, reducing the static leakage current etc. In this work, FinFET based OTA and CMOS based OTA are simulated with Spice simulation program by using 45nm PTM technology parameters. Transconductance and gain parameters of OTA circuits are compared. The simulation results indicated that there was an increase in FinFET based OTA AC gain by % 20.75 and transconductance in AC analysis by %64.4. Since FinFET based OTA has higher drain(output) current than CMOS based OTA, the transconductance of CMOS based OTA in AC analysis is 12.75 mu Omega(-1), while the transconductance of FinFET-based OTA in AC analysis is 20.96 mu Omega(-1). Having higher output current provides better transconductance parameter. Since FinFET based OTA has reduced short channel effects the gain of CMOS based OTA in AC analysis is 7.47, while the gain of FinFET based OTA in AC analysis is 9.02. The results show that FinFET based OTA outperforms CMOS based OTA and FinFET is a promising alternative technology to MOSFET for nanoscale design.