The temperature induced current transport characteristics in the orthoferrite YbFeO3-? thin film/p-type Si structure

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dc.authorid0000-0001-9724-7664
dc.contributor.authorPolat, O.
dc.contributor.authorCoşkun, M.
dc.contributor.authorEfeoglu, H.
dc.contributor.authorÇaglar, M.
dc.contributor.authorCoşkun, F. M.
dc.contributor.authorCaglar, Y.
dc.contributor.authorTurut, A.
dc.date.accessioned2025-05-10T19:45:45Z
dc.date.issued2021
dc.departmentİstanbul Medeniyet Üniversitesi
dc.description.abstractThe perovskite ytterbium ferrite is a new ferroelectric semiconductor material. We presented the temperature induced current-voltage (I-V) characteristics of the Al/YbFeO3-delta/p-Si/Al hetero-junction. The orthoferrite YbFeO3-delta thin films were deposited on a single crystal p-type Si substrate by a radio frequency magnetron sputtering system. The potential barrier height (BH) and ideality factor n of the heterojunction were obtained by thermionic emission current method based on the recommendations in the literature. The fact that the calculated slopes of I-V curves become temperature independent implying that the field emission current mechanism takes place across the device, which has been explained by the presence of the spatial inhomogeneity of BHs or potential fluctuations. Moreover, a tunneling transmission coefficient value of 26.67 was obtained for the ferroelectric YbFeO3-delta layer at the Al/p-Si interface.
dc.description.sponsorshipScientific and Technological Research Council of Turkey (TUBITAK) [116F025]; ESF [CZ.02.2.69/0.0/0.0/17_050/0008462]
dc.description.sponsorshipThis work was supported by The Scientific and Technological Research Council of Turkey (TUBITAK) through Grant No: 116F025. The author Polat is supported by the ESF under the project CZ.02.2.69/0.0/0.0/17_050/0008462.
dc.identifier.doi10.1088/1361-648X/abba69
dc.identifier.issn0953-8984
dc.identifier.issn1361-648X
dc.identifier.issue3
dc.identifier.scopus2-s2.0-85095707614
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1088/1361-648X/abba69
dc.identifier.urihttps://hdl.handle.net/20.500.14730/11371
dc.identifier.volume33
dc.identifier.wosWOS:000584924200001
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIop Publishing Ltd
dc.relation.ispartofJournal of Physics-Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250302
dc.subjectperovskite oxide
dc.subjectYbFeO3
dc.subjecthetero-junction
dc.subjectcurrent-voltage (I-V) characteristics
dc.subjectfield emission
dc.titleThe temperature induced current transport characteristics in the orthoferrite YbFeO3-? thin film/p-type Si structure
dc.typeArticle

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