Analysis of interface states and series resistances in Au/p-InP structures prepared with photolithography technique

Abstract

Some electronic parameters such as ideality factor, barrier height, series resistance and interface state densities of the Au/p-InP Schottky barrier diodes with 100 and 200 mu m diameter contacts have been investigated. We have calculated electronic parameters of these two diodes and compared using experimental forward bias current-voltage (I-V) and reverse bias capacitance-voltage measurements at room temperature. The values of ideality factor and barrier height for the 100 and 200 mu m diameter diodes have been obtained as 1.07, 0.84 and 1.08, 0.80 eV, respectively. In addition, we have calculated interface state density (N (SS) ) as a function of energy distribution (E (SS) -E (V) ) of these diodes and compared them. The energy distribution of interface states density has been determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. Density of interface states in the considered energy range are in close agreement with values obtained for 100 and 200 mu m diameter Au/p-InP.