Temperature dependence of Schottky diode characteristics prepared with photolithography technique

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dc.contributor.authorKorucu, Demet
dc.contributor.authorTurut, Abdülmecit
dc.date.accessioned2025-05-10T19:44:43Z
dc.date.issued2014
dc.departmentİstanbul Medeniyet Üniversitesi
dc.description.abstractA Richardson constant (RC) of 8.92 Acm(-2)K(-2) from the conventional Richardson plot has been obtained because the current-voltage data of the device quite well obey the thermionic emission (TE) model in 190-320 K range. The experimental nT versus T plot of the device has given a value of T-0 = 7.40 K in temperature range of 160-320 K. The deviations from the TE current mechanism at temperatures below 190 K have been ascribed to the patches introduced by lateral inhomogeneity of the barrier heights. Therefore, an experimental RC value of 7.49 A(cmK)(-2) has been obtained by considering Tung's patch model in the temperature range of 80-190 K. This value is in very close agreement with the known value of 8.16 Acm(-2)K(-2) for n-type GaAs.
dc.identifier.doi10.1080/00207217.2014.888774
dc.identifier.endpage1606
dc.identifier.issn0020-7217
dc.identifier.issn1362-3060
dc.identifier.issue11
dc.identifier.scopus2-s2.0-84905904179
dc.identifier.scopusqualityQ3
dc.identifier.startpage1595
dc.identifier.urihttps://doi.org/10.1080/00207217.2014.888774
dc.identifier.urihttps://hdl.handle.net/20.500.14730/11018
dc.identifier.volume101
dc.identifier.wosWOS:000340376000011
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherTaylor & Francis Ltd
dc.relation.ispartofInternational Journal of Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250302
dc.subjectGaAs semiconductors
dc.subjectbarrier inhomogeneity
dc.subjectbarrier height
dc.subjectSchottky barrier diodes
dc.subjectmetal-semiconductor contacts
dc.titleTemperature dependence of Schottky diode characteristics prepared with photolithography technique
dc.typeArticle

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