Magnetic properties of Mn doped crystalline and amorphous Ge thin films grown on Si (111)

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dc.authorid0000-0003-4620-4271
dc.contributor.authorGunduz Aykac, Ilknur
dc.contributor.authorOnel, Aykut Can
dc.contributor.authorToydemir Yasasun, Burcu
dc.contributor.authorColakerol Arslan, Leyla
dc.date.accessioned2025-05-10T19:30:39Z
dc.date.issued2020
dc.departmentİstanbul Medeniyet Üniversitesi
dc.description.abstractWe investigated the effects of crystalline order on the structural and magnetic properties of ultrathin Mn-doped Ge thin films grown by thermal diffusion. The dopant motion which occurs during the annealing stage appears to differ considerably depending upon whether the Ge layer is in a crystalline or an amorphous state. The details of the temperature-dependent magnetization curves reveal that the a-MnGe and c-MnGe films show ferromagnetic property up to 300K and similar to 250K, respectively. Ferromagnetic Mn5Ge3 thin film with weakly anisotropic in-plane magnetization is formed on amorphous Ge thin film, while weakly ferromagnetic Mn5Gex Si3-x nanostructures are developed on crystalline Ge thin film due to diffusion of Mn atoms through the Ge layer and interact with Si substrate.
dc.description.sponsorshipScientific Research Projects Coordination Unit of Gebze Technical University [2017-A-102-22]
dc.description.sponsorshipThis work was supported in part by Scientific Research Projects Coordination Unit of Gebze Technical University (Project number: 2017-A-102-22).
dc.identifier.doi10.3906/fiz-1909-17
dc.identifier.endpage76
dc.identifier.issn1300-0101
dc.identifier.issn1303-6122
dc.identifier.issue1
dc.identifier.scopus2-s2.0-85084750581
dc.identifier.scopusqualityQ2
dc.identifier.startpage67
dc.identifier.urihttps://doi.org/10.3906/fiz-1909-17
dc.identifier.urihttps://hdl.handle.net/20.500.14730/7677
dc.identifier.volume44
dc.identifier.wosWOS:000514195000007
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherTubitak Scientific & Technological Research Council Turkey
dc.relation.ispartofTurkish Journal of Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250302
dc.subjectMn-Ge ferromagnetism
dc.subjectsolid phase epitaxy
dc.subjectX-ray photoelectron spectroscopy depth profiling
dc.titleMagnetic properties of Mn doped crystalline and amorphous Ge thin films grown on Si (111)
dc.typeArticle

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