A COMPREHENSIVE DETERMINING OF CAPACITANCE -VOLTAGE PARAMETERS OF ELECTRONIC DEVICES WITH METAL AND p-Si JUNCTION

Abstract

Al-p-Si-Al structures were fabricated and temperature dependent capacitance versus voltage measurements were performedin this study. The Al contacts were grown by the sputtering method and then capacitance-voltage characteristics of thedevices were performed with forward and reverse biases. According to this measurements, the C-2 –V plots were conducted.With the help of those calculation, the barrier height vs temperature (?CV – T), the carrier concentration vs temperature (NA –T) and the depletion width vs temperature (w – T) graphs were plotted. In conclusion, it has been seen that the ?CV and wdecreased, and NA almost remained constant with increasing temperature.